Wafer polishing device with movable window

ABSTRACT

A wafer polishing device with movable window can be used for in-situ monitoring of a wafer during CMP processing. During most of the CMP operation, the window remains below a polishing surface of a polishing device to protect the window from the deleterious effects of the polishing process. When the window moves into position between the wafer and a measurement sensor, the window is moved closer to the polishing surface. In this position, at least some polishing agent collected in the recess above the window is removed, and an in-situ measurement can be taken with reduced interference from the polishing agent. After the window is positioned away from the wafer and measurement sensor, the window moves farther away from the wafer and polishing surface. With such a movable window, the limitations of current polishing devices are overcome.

This application is a Continuation of Ser. No. 09/038,171, filed Mar.10, 1998, now U.S. Pat. No. 6,068,539.

BACKGROUND

Chemical-mechanical polishing (CMP) is a well-known technique forremoving materials on a semiconductor wafer using a polishing device anda polishing agent. The mechanical movement of the polishing devicerelative to the wafer in combination with the chemical reaction of thepolishing agent provide an abrasive force with chemical erosion toplanarize the exposed surface of the wafer or a layer formed on thewafer. Rotating, orbital, and linear polishers are three types of toolsthat can be used in the CMP process. With a rotating polisher, arotating wafer holder supports a wafer, and a polishing pad on a movingplaten rotates relative to the wafer surface. In contrast, the platen ofan orbital polisher orbits as opposed to rotates during polishing. Witha linear polisher, a flexible belt moves a polishing pad linearly acrossa wafer surface, providing a more uniform velocity profile across thesurface of the wafer as compared to rotating or orbital polishers.

CMP polishers can incorporate various in-situ monitoring techniques tomonitor the polished surface of the wafer to determine the end point ofthe polishing process. U.S. Pat. No. 5,433,651 and European PatentApplication No. EP 0 738 561 A1 describe rotating polishers that aredesigned for in-situ monitoring. In the '651 patent, a rotatingpolishing platen has a fixed window, which is flush with the platen butnot with the polishing pad on the platen. As the platen rotates, thewindow passes over an in-situ monitor, which takes a reflectancemeasurement indicative of the end point of the polishing process.Because the top surface of the window is below the top surface of thepolishing pad, polishing agent collects in the recess above the window,adversely affecting the measurement by scattering light travelingthrough the window.

European Patent Application No. EP 0 738 561 A1 discloses a rotatingpolishing platen with a fixed window, which, unlike the one in the '651patent, is substantially flush with or formed from the polishing pad.Because the top surface of the window is in the same plane as the topsurface of the polishing pad during the entire polishing process, theoptical transparency of the window can be damaged when the wafer slidesover the window and when pad conditioners cut small groves across thepolishing pad. Since the window is not replaceable, once the window isdamaged, the entire pad-window polishing device must be replaced even ifthe polishing pad itself does not need to be replaced.

There is a need, therefore, for an improved wafer polishing device thatwill overcome the problems described above.

SUMMARY

The present invention is defined by the following claims, and nothing inthis section should be taken as a limitation on those claims.

By way of introduction, the preferred embodiments described belowinclude a polishing device that can be used for in-situ monitoring of awafer during CMP processing. Unlike polishing devices that contain fixedwindows, the polishing devices of these preferred embodiments contain amovable window. During most of the CMP operation, the window remains ina position away from the polishing surface of the polishing device toprotect the window from the deleterious effects of the polishingprocess. When the polishing device positions the window between thewafer and a measurement sensor, the window moves to a position closer tothe polishing surface of the polishing device. In this position, atleast some polishing agent collected in the recess between the windowand polishing surface is removed, and an in-situ measurement can betaken with reduced interference. After the polishing device positionsthe window away from the wafer and measurement sensor, the windowreturns to a position farther away from the polishing surface of thepolishing device.

The preferred embodiments will now be described with reference to theattached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an illustration of a polishing device of a preferredembodiment with a movable window in a first position.

FIG. 2 is an illustration of a polishing device of a preferredembodiment with a movable window in a position closer to a polishingsurface of the polishing device.

FIG. 3 is an illustration of a polishing device of a preferredembodiment comprising a single-piece flexible window.

FIG. 4 is an illustration of a polishing device of a preferredembodiment comprising a flat-sheet flexible window.

FIG. 5 is an illustration of a polishing device of a preferredembodiment comprising a sliding window.

FIG. 6 is an illustration of a polishing device of a preferredembodiment comprising a bellows window.

FIG. 7 is an illustration of a polishing device of a preferredembodiment in which a window displacement mechanism is disposed over ameasurement sensor.

FIG. 8 is an illustration of a polishing device of a preferredembodiment in which a magnet and a set of conductors are operative tomove a window from a first to a second position.

FIG. 9 is an illustration of a polishing device of a preferredembodiment in which a movable window is drawn towards a windowdisplacement mechanism.

FIG. 10 is an illustration of a polishing device of a preferredembodiment in which a movable window is moved closer to a polishingsurface when the window is positioned away from a window displacementmechanism.

FIG. 11 is an illustration of a linear polishing tool of a preferredembodiment.

FIG. 12 is an illustration of a rotating polishing tool of a preferredembodiment.

DETAILED DESCRIPTION OF THE PRESENTLY PREFERRED EMBODIMENTS

Turning now to the drawings, FIGS. 1 and 2 illustrate a polishing device100 of a preferred embodiment that can be used for in-situ monitoring ofa wafer during CMP processing. As shown in these figures, a polishingdevice 100 comprises an opening, which is filled by a window 110 affixedto the polishing device 100 by a flexible diaphragm 120. Located abovethe polishing device 100 is a wafer 140 undergoing CMP, and locatedbelow the polishing device 100 is a measurement sensor 130 forperforming in-situ monitoring of the wafer 140 during CMP. Forsimplicity, the term “polishing device” in this specification and thefollowing claims is intended broadly to encompass any device capable ofperforming CMP processing on a semiconductor wafer. A “polishing device”comprises a polishing surface, which is typically a polishing padintegrated with or affixed to the top of a polishing device subassembly.Polishing devices include, but are not limited to, a polishing pad andbelt used in a linear polisher, a polishing pad and movable platen usedin a rotating polisher, and a polishing pad and movable platen used inan orbital polisher.

Unlike conventional polishing devices that contain fixed windows forin-situ monitoring, the polishing device 100 of FIGS. 1 and 2 comprisesa window 110 that is movable from a first position to a second position.During some or most of the polishing process, the window 110 ispositioned away from the wafer 140 and the polishing surface ofthe-polishing device 100 (FIG. 1). At or before the time when thepolishing device 100 positions the window 110 at a measurement locationbetween the wafer 140 and the measurement sensor 130, the window 110 ismoved to a position closer to the polishing surface of the polishingdevice 100 (FIG. 2). It is preferred that the top surface of the window110 be substantially flush with the top surface of the polishing device100 when the window 110 is in the second position. With the window 110moved to a position closer to the polishing surface of the polishingdevice 100, the measurement sensor 130 takes a measurement of thesurface of the wafer 140 through the window 110. After the polishingdevice 100 moves the window 110 away from the measurement location, thewindow 110 is returned to a position farther away from the polishingsurface of the polishing device 100.

Because the polishing device 100 has a movable window 110, the problemsassociated with the prior art are overcome. Specifically, because thewindow 110 is below the polishing surface of the polishing device 100for some or most of the CMP process, the window 110 is not damaged bythe deleterious effects of the polishing process. By being below thepolishing surface of the polishing device 100, the optical transparencyof the window 110 is not damaged by conditioners that cut small groovesacross the polishing surface during CMP to enhance the polishingoperation. Further, because the window 110 moves closer to the polishingsurface when a wafer measurement it taken, at least some polishing agentcollected in the recess between the window 110 and polishing surface isremoved, and an in-situ measurement can be taken with reducedinterference. Additionally, in contrast to the fixed windows of priorart polishing devices, the window 110 of this preferred embodiment iseasily replaceable. Since the window is easily replaceable, it alone,instead of the entire polishing device, can be replaced when the opticaltransparency of the window deteriorates.

In the preferred embodiment shown in FIGS. 1 and 2, the window 110 ismovably mounted to the polishing device by a flexible diaphragm 120.Preferably, the window 110 is made from urethane. It is important tonote that a single urethane (preferably aromatic or aliphatic) or acombination of urethanes can be used. It is preferred that the window110 have an area of about 1 to 100 cm², a thickness of about 0.002 to0.050 inches (most preferably about 0.010 to 0.015 inches), a hardnessof about 25 Shore A to 75 Shore D (most preferably about 45 Shore D),and high optical-transmission for ultraviolet and infrared light (about200 to 1200 nm, most preferably about 300 to 800 nm). It is preferredthat the first surface of the window be coated with a slurry-phobicmaterial, such as a silicone, lyophilic or hydrophobic material.

The flexible diaphragm 120 is made preferably from a latex or naturalrubber, although any other material that provides enough lift to removepolishing agent from the recess above the window 110 can be used. It ispreferred that the flexible diaphragm 120 have an area of about 1 to 100cm² (most preferably about 25 cm²) and a thickness of about 0.001 to0.040 inches (most preferably about 0.008 inches). Preferably, a hole ismade in the flexible diaphragm 120 about the size of the window 110, andthe edges of the window 110 are affixed to the flexible diaphragm 120using about a 0.001 to 0.020 inch-thick layer (most preferably a 0.005inch-thick layer) of urethane epoxy. The flexible diaphragm/windowcomponent then can be affixed to the polishing device using any suitableglue. In the polishing device shown in FIGS. 1 and 2, the flexiblediaphragm 120 is glued into a recess in the polishing device 100.

As an alternative to the configuration shown in FIGS. 1 and 2, asingle-piece window 300 (FIG. 3) with the appropriate optical andflexibility characteristics can be used. It is preferred that thesingle-piece window 300 be made of urethane and have high opticaltransmission for ultraviolet and infrared light (about 200 to 1200 nm,most preferably about 300 to 800 nm). It is further preferred that thecenter of the single-piece window 300 have a thickness of about 0.002 to0.050 inches (most preferably about 0.010 to 0.015 inches) and that theedge flange of the single-piece window 300 have a thickness of about0.001 to 0.040 inches (most preferably about 0.006 inches). Inoperation, when positioned under the wafer, the single-piece window 300flexes toward the polishing surface of the polishing device, and ameasurement sensor takes a measurement of the surface of the waferthrough the single-piece window 300. After the polishing device movesthe single-piece window 300 away from the measurement location, thesingle-piece window 300 returns to a position farther away from thepolishing surface of the polishing device.

In another alternative, shown in FIG. 4, a flat-sheet window 400 isused. It is preferred that the flat-sheet window 400 be made ofurethane, have high optical transmission for ultraviolet and infraredlight (about 200 to 1200 nm, most preferably about 300 to 800 nm), andhave a thickness of about 0.002 to 0.050 inches (most preferably about0.010 inches). In operation, when positioned under the wafer, theflat-sheet window 400 flexes toward the polishing surface of thepolishing device, and a measurement sensor takes a measurement of thesurface of the wafer through the flat-sheet window 400. After thepolishing device moves the flat-sheet window 400 away from themeasurement location, the flat-sheet window 400 returns to a positionfarther away from the polishing surface of the polishing device.

FIG. 5 illustrates another alternative in which a sliding window 500 isused. When positioned under the wafer, the sliding window 500 slidescloser to the polishing surface of the polishing device. After thepolishing device moves the sliding window 500 away from the measurementlocation, the sliding window 500 slides back to a position farther awayfrom the polishing surface of the polishing device. In the embodimentshown in FIG. 5, the polishing device is shaped to retain the slidingwindow 500 as it slides closer to and farther away from the polishingsurface of the polishing device.

FIG. 6 illustrates another preferred embodiment in which a bellowswindow 600 is employed. When the bellows window 600 moves into ameasurement location under the wafer, the bellows window 600 extendscloser to the polishing surface of the polishing device. When thebellows window 600 moves away from the measurement location, it returnsto a position farther away from the polishing surface of the polishingdevice.

It is important to note that the above-described windows are only a fewof the many forms that can be used and that any window construction thatallows the window to move closer to the polishing surface is encompassedby this invention. Further, any window size or shape can be used. It ispreferred, however, that, when the window is not moved closer to thepolishing surface, the window be positioned below the grooves created bya polishing-device conditioner. (In a polishing pad with a thickness of50 mils, the grooves are typically 20 mils thick.)

The window can be moved from the first to the second position with anysuitable means. In one preferred embodiment (shown in FIG. 7), a windowdisplacement mechanism 710 is positioned beneath the polishing device740 near the measurement sensor 720. As shown in FIG. 7, the windowdisplacement mechanism 710 is positioned above the measurement sensor720 and contains an opening through which the measurement sensor 720 canmonitor the wafer 730. Alternatively, the measurement sensor 720 can bepositioned above or adjacent to the window displacement mechanism 710.Of course, other arrangements are possible. When the polishing device740 positions the window 750 over the window displacement mechanism 710,the window displacement mechanism 710 moves the window 750 closer to thepolishing surface of the polishing device 740. After the polishingdevice 740 positions the window 750 away from the window displacementmechanism 710, the resilient nature of the diaphragm or window causesthe window 750 to return to a position farther away from the wafer 730and the polishing surface of the polishing device 740. Alternatively, asecond window displacement mechanism can be used to lower the window 750away from the polishing surface.

The window displacement mechanism can take any number of differentforms. By way of example only, the window displacement mechanism canemploy air pressure, water pressure, pressure from mechanicalattachments, electromagnetic pressure, or any combination thereof. It ispreferred, however, that the window displacement mechanism be a fluidplaten. Fluid platens are described in a patent application titled“Control Of Chemical-Mechanical Polishing Rate Across A Wafer SurfaceFor A Linear Polisher;” Ser. No. 08/638,462; filed Apr. 26, 1996 and inU.S. Pat. Nos. 5,558,568 and 5,593,344, all of which are herebyincorporated by reference.

In an alternative embodiment, the window displacement mechanism isdisposed at least partially in the polishing device. In one suchalternative embodiment (shown in FIG. 8), a window 810 and a flexiblemember 830 comprising a set of current-carrying conductors 840 aredisposed in a polishing device 820. Although two conductors are shown inFIG. 8, it is important to note that fewer or more conductors can beused. A magnet 850 disposed in the polishing device 820 creates amagnetic field across the set of current carrying conductors 840. Whencurrent is caused to flow through the conductors 840, electromagneticforces on the conductors 840 move the flexible member 830 and the window810 closer or farther away from the polishing surface of the polishingdevice 820, depending on the direction of the current flow. Current canbe applied to the conductors 840 from an external source (not shown)when the window 810 moves between a wafer and a measurement sensor, asdetected by a position sensor, such as, but not limited to, aHall-effect sensor, eddy-current sensor, optical interrupter, acousticsensor, or optical sensor.

With the embodiments described above, the rest position of the window isaway from the polishing surface. In an alternative embodiment, the restposition of the window is can be in a position closer to the polishingsurface, and a window displacement mechanism can be used to move thewindow away from the polishing surface at the appropriate time (e.g.,when the window is located at a pad-conditioning station). As shown inFIGS. 9 and 10, a window displacement mechanism 900 is disposed oneither side of a measurement sensor 910. The window displacementmechanism 900 can comprise any suitable mechanism (such as a vacuum or amagnet, for example) to generate a displacement force 920. Thedisplacement force 920 draws the window 930 away from the polishingsurface when the polishing device 940 positions the window 930 over thewindow displacement mechanism 900. When the polishing device 940positions the window 930 between the wafer (not shown) and themeasurement sensor 910 (a location in which there is no windowdisplacement mechanism 900), the window 930 is allowed to move to itsrest position closer to the polishing surface, as shown in FIG. 10.After the polishing device 940 positions the window 930 away from themeasurement sensor 910 and again over the window displacement mechanism900, the window 930 is again drawn farther away from the polishingsurface (FIG. 9). Such a mechanism would be particularly useful to movethe window safely below the pad cutting surface of the pad conditioner.

In yet another alternate embodiment, a first displacement force is usedto position the window closer to (or farther away from) the polishingsurface. The window remains in this position (even it the window ismoved into or out of the measurement location) until a seconddisplacement force moves the window farther way from (or closer to) thepolishing surface. In this way, the window would act as a flip-flop.

The preferred embodiments described above can be used in linear,rotating, and orbital polishing devices. The following is a detaileddiscussion of a preferred linear polishing device. It is important tonote that the principles described below can be readily adapted torotating and orbital polishing devices. FIG. 11 is an illustration of apreferred embodiment in which the polishing device includes a belt 1120on a linear polisher 1100, and the window displacement mechanismincludes a fluid platen 1155. As shown in this figure, the linearpolisher 1100 has a wafer carrier 1110 attached to a polishing head 1105that secures the wafer with a mechanical retaining means, such as aretainer ring and/or a vacuum. It is preferred that a carrier film suchas that available from Rodel (DF200) be used between the wafer and thewafer carrier 1110. The wafer carrier 1110 rotates the wafer over thebelt 1120, which moves about first and second rollers 1130 and 1135. Therollers 1130, 1135 are preferably between about 2 to 40 inches indiameter. Driving means, such as a motor (not shown), rotates therollers 1130, 1135, causing the belt 1120 to move in a linear motionwith respect to the surface of the wafer. Preferably, the belt 1120moves at a rate of about 200 to 1000 ft/minute (most preferably about400 ft/minute). As used herein, “belt” refers to a closed-loop elementcomprising at least one layer including a layer of polishing material. Adiscussion of the layer(s) of the belt element is developed below. It ispreferred that the belt 1120 have a width of 13 inches and be tensionedwith a force of about 600 lbs.

As the belt 1120 moves in a linear direction, a polishing agentdispensing mechanism 1140 provides polishing agent to the belt 1120,preferably at a flow rate of about 100 to 300 ml/minute. The polishingagent preferably has a pH of about 1.5 to about 12. One type ofpolishing agent that can be used is Klebesol available from Hoechst,although other types of polishing agent can be used depending on theapplication. The polishing agent moves under the wafer along with thebelt 1120 and may be in partial or complete contact with the wafer atany instant in time during the polishing process. A conditioner (such asthose available from Niabraze Corporation and TBW Industries, Inc.) canbe used to recondition the belt 1120 during use by scratching the belt1120 to remove polishing agent residue build-up and/or pad deformation.

The belt 1120 moves between the fluid platen 1155 and the wafer. It ispreferred that the fluid platen 1155 have an air bearing and have about1-30 fluid flow channels. It also is preferred that a pre-wet layer ofde-ionized water mist be used between the platen 1155 and the belt 1120to prevent blockage of the flow channels by any polishing agent thatcomes underneath the belt 1120. The fluid platen 1155 provides asupporting platform on the underside of the belt 1120 to ensure that thebelt 1120 makes sufficient contact with the wafer for uniform polishing.The wafer carrier 1110 presses downward against the belt 1120 withappropriate force (preferably about 5 psi) so that the belt 1120 makessufficient contact with the wafer for performing CMP. Since the belt1120 is flexible and has a tendency to move downwardly when the waferpresses downwardly onto it, the fluid platen 1155 provides a necessarycounteracting support to this downward force. The fluid platen 1155 canbe used to control forces exerted against the underside of the belt1120. By such fluid flow control, pressure variations exerted by thebelt 1120 on the wafer can be controlled to provide a more uniformpolishing rate of the wafer.

The belt 1120 contains a movable window 1190 as described above. As thebelt 1120 moves linearly under the wafer during the CMP process, themovable window 1190 passes under the wafer carrier 1105 and over thefluid platen 1155 and a measurement sensor 1195. When the window 1190moves over the fluid platen 1155, fluid from the platen 1155 lifts thewindow 1190 closer to the polishing surface of the belt 1120, preferablyso that the window 1190 is substantially flush with the polishingsurface. Additionally, when the window 1190 is between the wafer and themeasurement sensor 1195, an optical circuit is completed, and in-situmonitoring can be performed. Preferably, a short-distance diffuse reflexsensor (such as a Sunx model number CX-24 sensor) enables operation ofthe measurement sensor.

As mentioned above, a “belt” comprises at least one layer of material,including a layer of polishing material. There are several ways in whichto construct a belt. One way uses a stainless steel belt, which can bepurchased from Belt Technologies, having a width of about 14 inches anda length of about 93.7 inches, inner diameter. In addition to stainlesssteel, a base layer selected from the group consisting of aramid,cotton, metal, metal alloys, or polymers can be used. The preferredconstruction of this multi-layered belt is as follows.

The stainless steel belt is placed on the set of rollers of the CMPmachine and is put under about 2,000 lbs of tension. When the stainlesssteel belt is under tension, a layer of polishing material, preferablyRodel's IC 1000 polishing pad, is placed on the tensioned stainlesssteel belt. The subassembly is them removed from the rollers and anunderpad, preferably made of PVC, is attached to the underside of thestainless steel belt with an adhesive capable of withstanding theconditions of the CMP process. The constructed belt preferably will havea total thickness of about 90 mils: about 50 mils of which is the layerof polishing material, about 20 mils of which is the stainless steelbelt, and about 20 mils of which is the PVC underpad.

The above-described construction requires technicians and time to placethe pad on the stainless steel belt. As an alternative, the belt can beformed as one integrated component as described in a patent applicationtitled “Integrated Pad and Belt for Chemical Mechanical Polishing,” Ser.No. 08/800,373, filed Feb. 14, 1997, hereby incorporated by reference.This belt is formed around a woven Kevlar fabric. It has been found thata 16/3 Kevlar, 1500 Denier fill and a 16/2 cotton, 650 Denier warpprovide the best weave characteristics. As is well known in the art,“fill” is yarn in the tension-bearing direction, and “warp” is yarn inthe direction perpendicular to the tension bearing direction. “Denier”defines the density and diameter of the mono-filament. The first numberrepresents the number of twists per inch, and the second number refersto the number of filaments that are twisted in an inch.

The woven fabric is placed in a mold that preferably has the samedimensions as the stainless steel belt described above. A clear urethaneresin is poured into the mold under a vacuum, and the assembly is thenbaked, de-molded, cured, and ground to the desired dimension. The resinmay be mixed with fillers or abrasives in order to achieve desiredmaterial properties and/or polishing characteristics. Since fillers andabrasive particles in the polishing layer may scratch the polishedarticle, it is desired that their average particle size be less thanabout 100 microns.

Instead of molding and baking the woven fabric with urethane, a layer ofpolishing material, preferably a Rodel IC 1000 polishing pad, can beattached to the woven fabric or the preconstructed belt as it was on thestainless steel belt.

In any of these belt constructions, fillers and/or abrasive particles(having an average particle size preferably less than 100 microns) canbe dispersed throughout the polishing layer to enable use of lowerconcentration of abrasive particles in the polishing agent. Thereduction of abrasive particle concentration in the polishing agentleads to substantial cost savings (typically, polishing agent costsrepresent 30-40% of the total cost of CMP processes). It also leads to areduction in light scattering due to the presence of polishing agentparticles. This reduces noise in the signal obtained by the monitor andhelps in getting more accurate and repeatable results.

The polishing layer also can comprise polishing agent transportchannels. Such polishing agent transport channels from a texture orpattern in the form of grooves (depressions) etched or molded into thesurface of the polishing layer. These grooves may be, for example, ofrectangular, U-, or V-shape. Typically, these channels are less than 40mils deep and less than 1 mm wide at the polishing layer's uppersurface. The polishing agent transport channels are typically arrangedin a pattern such that they run the length of the polishing surface.However, they may be arranged in any other pattern as well. The presenceof these channels greatly enhances the transport of polishing agentbetween the polishing layer and wafer. This leads to improved polishingrates and uniformity across the wafer surface.

To place a window in a polishing device (including the polishing devicesdescribed above), a hole can be punched in the polishing device at thedesired location to form the opening. Any of the windows described abovethen can be disposed within this opening and affixed to the polishingdevice. Alternatively, the window can be molded in the appropriate shapedirectly in the polishing device at the appropriate location. Forexample, if the polishing device is a linear belt with a stainless steellayer, the urethane resin can be cast in the desired location in theopening. A casting mold having a mirror-finished rubber lining can beplaced on both sides of the cast window during the curing process. Asanother example, if the polishing device is a linear belt with a wovenfabric layer, before placing the woven fabric in the mold, an openingcan be made in the fabric and spacers can be positioned in the openingin the desired locations. After the baking process described above, theopening in the belt would contain the urethane monitoring window at thedesired location.

As an alternative to placing openings in the polishing device, thewindow can be made integral with the polishing device. That is, thepolishing device itself can be partially or completely made of amaterial substantially transparent to light within a selected range ofoptical wavelengths. In this alternative, the movable window comprises aportion of the integrated polishing device that is below the polishingsurface. For a linear belt, each layer of fabric can be woven withKevlar or some other material so as to provide openings in the fabric,or can be constructed with optically clear fiber. Clear urethane, forexample, can then molded be onto the fabric in a manner described above.

As discussed above, the term “polishing device” includes, but is notlimited to, polishing devices used in linear polishing tools, rotatingpolishing tools, and orbital polishing tools. Linear polishers aredescribed in a patent application titled “Control of Chemical-MechanicalPolishing Rate Across A Wafer Surface;” Ser. No. 08/638,464, filed Apr.26, 1996 and in a patent application titled “Linear Polisher and Methodfor Semiconductor Wafer Planarization;” Ser. No. 08/759,172; filed Dec.3, 1996. U.S. Pat. No. 5,433,651 and European Patent Application No. EP0 738 561 A1 describe rotating polishers, such as the rotating polisher1200 illustrated in FIG. 12, that can be used for in-situ monitoring.U.S. Pat. No. 5,554,064 teaches the use of orbital polishers. Each ofthese references is hereby incorporated by reference. Those skilled inthe art can apply the principles taught above in reference to linearpolishing tools to rotating and orbital polishing tools.

For simplicity, the term “measurement sensor” in this specification andthe following claims is intended broadly to encompass any device thatcan be used for in-situ monitoring of a wafer during CMP processing. Thewidest variety of devices can be used to gather information about thestate of the wafer being polished. These devices include, but are notlimited to, a light source, interferometer, ellipsometer, beam profilereflectometer, or optical stress generator. By using a measurementsensor, the end point of the CMP process can be determined by detectingwhen the last unwanted layer has been removed from the wafer or when aspecified amount of material remains on the wafer. The measurementsensor also can be used to determine removal rate, removal ratevariation, and average removal rate at any given circumference of awafer. In response to these measurements, polishing parameters (e.g.,polishing pressure, carrier speed, polishing agent flow) can beadjusted. In-situ measurement sensors used with rotating polishers aredescribed in the U.S. Pat. No. 5,433,651 and European Patent ApplicationNo. EP 0 738 561 A1. In-situ measurement sensors used with linearpolishers are described in U.S. patent application Ser. Nos. 08/865,028;08/863,644; and 08/869,655 filed on May 28, 1997. Each of thesereferences is hereby incorporated by reference.

The foregoing detailed description has described only a few of the manyforms that this invention can take. Of course, many changes andmodifications are possible to the preferred embodiments described above.For this reason it is intended that this detailed description beregarded as an illustration and not as a limitation of the invention. Itis only the following claims, including all equivalents, that areintended to define the scope of this invention.

What is claimed is:
 1. A method for performing chemical mechanicalpolishing on a wafer, the method comprising: (a) providing a polishingelement comprising a polishing surface and a window comprising a firstsurface, the window being movably disposed within the polishing elementto move between first and second positions, the first surface beingcloser to the polishing surface in the second position than in the firstposition; (b) performing chemical mechanical polishing on a wafer withthe polishing element; and (c) during chemical mechanical polishing ofthe wafer, moving the window to the second position.
 2. The method ofclaim 1 further comprising: (d) when the window is in the secondposition, performing an in-situ measurement of the wafer.
 3. A chemicalmechanical polishing element comprising: a polishing surface; and awindow comprising a first surface and movably disposed within thepolishing element to move between first and second positions, the firstsurface being closer to the polishing surface in the second positionthan in the first position.
 4. The invention of claim 3, wherein thefirst surface is substantially flush with the polishing surface in thesecond position.
 5. The invention of claim 3, further comprising aflexible diaphragm coupling the window with the polishing element. 6.The invention of claim 3, wherein the window comprises a single-piecewindow.
 7. The invention of claim 3, wherein the window comprises aflat-sheet window.
 8. The invention of claim 3, wherein the windowcomprises a sliding window.
 9. The invention of claim 3, wherein thewindow comprises a bellows window.
 10. The invention of claim 3, whereinthe window is affixed to the polishing element.
 11. The invention ofclaim 3, wherein the window is integral with the polishing element. 12.The invention of claim 3, wherein the window is molded in the polishingelement.
 13. The invention of claim 3, wherein the first surface of thewindow comprises a slurry-phobic material.
 14. The invention of claim 3,wherein the chemical mechanical polishing element comprising a polishingelement selected from the group consisting of a linear polishingelement, a rotating polishing element, and an orbital polishing element.15. A chemical mechanical polisher operative to perform chemicalmechanical polishing on a wafer, the chemical mechanical polishercomprising: a chemical mechanical polishing element comprising: apolishing surface; and a window comprising a first surface and movablydisposed within the polishing element to move between first and secondpositions, the first surface being closer to the polishing surface inthe second position than in the first position; and a windowdisplacement mechanism operative to move the window within the polishingelement; wherein the window is positioned in the chemical mechanicalpolishing element to move intermittently into alignment with said waferas said wafer is undergoing chemical mechanical polishing.
 16. Theinvention of claim 15 further comprising an in-situ measuring device,wherein the window is positioned between the in-situ measuring deviceand said wafer when the window moves into alignment with said wafer. 17.The invention of claim 15 further comprising a pad conditionercomprising a pad cutting surface, wherein the first surface of thewindow is below the pad cutting surface of the pad conditioner in thefirst position.
 18. The invention of claim 15, wherein the windowdisplacement mechanism is operative to move the window from the first tothe second position.
 19. The invention of claim 15, wherein the windowdisplacement mechanism is operative to move the window from the secondto the first position.
 20. The invention of claim 15, wherein thechemical mechanical polishing element comprising a polishing elementselected from the group consisting of a linear polishing element, arotating polishing element, and an orbital polishing element.